With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management.
Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the OPEN Alliance MGbit ethernet applications.
Nexperia offers engineers access to one of the most extensive CFP packaged diodes portfolios on the market from one supplier.
Nexperia will demonstrate how its ongoing commitment to investment in R&D and capacity is supporting these megatrends with its expanding portfolio
The expansion of Nexperia’s expertise comes through the acquisition of Netherlands-based Nowi, founded in 2016.
Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and
Standard products include the PNU65010ER (CFP3) and PNU65010EP (CFP5) while AEC-Q101 qualified products include the PNU65010ER-Q (CFP3) and PNU65010EP-Q (CFP5).
Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Th
In contrast to the battery voltage found in cars and smaller vehicles, 24 V board nets are typically used in trucks and commercial vehicles.
Nexperia developed the X2SON packages - part of its MicroPak package range - to provide the smallest footprint for logic functions while ensuring pad pitch remains 0.4mm
With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.
Developed to meet the requirements of Super Speed USB applications, the new devices provide effective 1, 2 & 3 line pair protection (Tx +/-, Rx +/-, D +/-) and filtering.
Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon
Nexperia’s TrEOS technology optimizes the three pillars of ESD protection to deliver devices with the ideal combination of low capacitance, low clamping voltage and high
Measuring just 2 mm x 2 mm (14 pin), 2 mm x 2.4 mm (16 pin), 2 mm x 3.2 mm (20 pin) and 2 mm x 4 mm (24 pin), the 0.4 mm pitch DHXQFN packages are only 0.45 mm high.
- DIODE ZENER 6.2V 250MW TO236AB
- BZX884S-B68/SOD882BD/XSON2
- DIODE ZENER 8.2V 320MW SOD323
- IC MULTIPLEXER 2 X 4:1 16SSOP
- IC BUFFER INVERT 5.5V 20SO
- IC TXRX NON-INVERT 5.5V 20TSSOP
- MOSFET N-CH 200V 20A DPAK
- DIODE ZENER 3.6V 250MW TO236AB
- DIODE ZENER 3.6V 250MW DFN1006-2
- TVS DIODE 15VWM 40VC DFN1006D-2
- IC MULTIVIBRATOR 5.3NS 8XSON
- IC GATE OR 4CH 2-INP 14TSSOP
- IC INVERT SCHMITT 2CH 2-IN 6XSON
- VERY LOW VF MEGA SCHOTTKY BARRIE
- NOW NEXPERIA 2PD601ASL - SMALL S
- IC FF D-TYPE SNGL 8BIT 20TSSOP
- IC MULTIPLEXER 1 X 2:1 6TSOP
- TRANS NPN 300V 0.1A SOT89
- TRANS NPN 60V 1A DFN2020D-3
- TVS DIODE 15VWM 44VC SOD323
- IC INVERTER 2CH 2-INP 6XSON
- SMALL SIGNAL BIPOLAR TRANSISTOR
- TRANS PNP 45V 500MA SOT323
- IC GATE NOR 4CH 2-INP 14SO
- MOSFET N-CH 30V 5A DFN2020MD-6
- N-CHANNEL POWER MOSFET
- DIODE ZENER 10V 250MW DFN1006-2
- IC MULTIPLEXER 4 X 2:1 16SO
- CMC 6LN SMD ESD