Nexperia, the expert in essential semiconductors, has announced the latest additions to the Nexperia TrEOS portfolio, the PESD4V0Y1BBSF and PESD4V0X2UM extremely low clamping ESD protection diodes. These devices combine high surge robustness with very low trigger and clamping voltages and wide pass-bands, providing exceptional levels of immunity to surges, as demonstrated by their excellent IEC61000-4-5 ratings.

“Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Thunderbolt™, HDMI 2.1 and Universal Flash,” said Stefan Seider, Senior Product Manager at Nexperia. “The fast-switching speeds of the PESD4V0Y1BBSF and PESD4V0X2UM deliver an extremely effective ESD peak suppression performance for high-speed while their low trigger voltage helps to reduce the energy content of IEC61000-4-5 8/20 µs surge pulses significantly.”

Available in the low-inductance DSN0603-2 package, the one-line PESD4V0Y1BBSF offers a trigger voltage of 6.3 V TLP combined with a typical device robustness and capacitance of 25 A 8/20 µs and 0.7 pF, respectively. The PESD4V0Y1BBSF offers a clamping voltage at 16 A 100 ns TLP of only 2.4 V, at 20 A 8/20 µs surge only 3.4 V. The two-line PESD4V0X2UM comes in the compact DFN1006-3 package and offers a trigger voltage of 8 V, combined with a typical device robustness exceeding 14 A 8/20 µs with a typical device capacitance of 0.82 pF.

While both devices offer excellent protection for USB2.0 D+/D- lines, the PESD4V0Y1BBSF has a S21 pass-band exceeding 7.5 GHz, making it suitable for USB3.x @ 5 Gbps. Both devices provide high levels of immunity to surges, as demonstrated by their excellent IEC61000-4-5 ratings.

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