Nexperia, the global leader in discretes, logic and MOSFET devices, today announced its lowest-ever RDS(on) NextPower S3 MOSFETs in Trench 11 technology that have been achieved without compromising other important parameters such as drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.
Very low RDS(on) is required by many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA - a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps. This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 amps, and 100% final production test at up to 190 amps.
Devices are offered in LFPAK56 (Power-SO8) and LFPAK33 (Power33), both offering unique copper-clip construction which absorbs thermal stresses, increasing quality & reliability. The PSMNR58-30YLH is housed in LFPAK56, Nexperia’s 4-pin Power-SO8 with a footprint of 30 mm2 and a pitch of just 1.27 mm.
Comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia: “The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability. This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications.” Examples include: brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification; battery protection; mobile fast-charge and DC load switch.
All registered trademarks and other trademarks belong to their respective owners. For more details, please visit Nexperia(NXP) official site.
- IC INVERT SCHMITT 1CH 1IN 5TSSOP
- IC BUFFER INVERT 3.6V 8VSSOP
- TRANS NPN 32V 0.1A SOT23
- TRANS PNP 80V 4.5A SOT223
- DIODE ZENER SOT23/TO236AB
- IC MULTIPLEXER 2 X 4:1 16SO
- TRANS NPN 45V 1A 3HUSON
- IC FF D-TYPE SNGL 8BIT 20TSSOP
- IC COUNTER BINARY 14STAGE 16SOIC
- IC BUF NON-INVERT 5.5V 48TSSOP
- TRANS 2PNP 55V 2A DFN2020D-6
- DIODE ZENER 15V 300MW SOD523
- Nexperia announced two Electrostatic Discharge (ESD) protection devices
- Nexperia announced the latest addition to its family of voltage level translators, the NXT4557GU and
- Nexperia announced the release of a new range of 20 V & 30 V MOSFETs in the world’s smallest DFN pac
- Nexperia introduced the PMCB60XN and PMCB60XNE 30V N-channel small-signal trench MOSFETs
- Nexperia announced an extension to its portfolio of extremely low clamping and ultra-low capacitance
- Nexperia announced the latest additions to its rapidly expanding portfolio of Clip-bonded FlatPower
- Nexperia will be showcasing its offering for automotive and industrial applications at electronica 2
- Nexperia announced a broadening to its portfolio of power management products
- Nexperia extends its ASFETs for Hotswap and Soft Start portfolio
- Nexperia announced the expansion of its portfolio of Clip-bonded FlatPower (CFP) packaged diodes
- Nexperia announced the latest additions to the Nexperia TrEOS portfolio, the PESD4V0Y1BBSF and PESD4
- Nexperia introduced an AEC-Q101 qualified portfolio with six ESD protection devices (PESD2CANFD36XX-