Nexperia, the global leader in discretes, logic and MOSFET devices, today announced its lowest-ever RDS(on) NextPower S3 MOSFETs in Trench 11 technology that have been achieved without compromising other important parameters such as drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.
Very low RDS(on) is required by many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA - a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps. This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 amps, and 100% final production test at up to 190 amps.
Devices are offered in LFPAK56 (Power-SO8) and LFPAK33 (Power33), both offering unique copper-clip construction which absorbs thermal stresses, increasing quality & reliability. The PSMNR58-30YLH is housed in LFPAK56, Nexperia’s 4-pin Power-SO8 with a footprint of 30 mm2 and a pitch of just 1.27 mm.
Comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia: “The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability. This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications.” Examples include: brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification; battery protection; mobile fast-charge and DC load switch.
All registered trademarks and other trademarks belong to their respective owners. For more details, please visit Nexperia(NXP) official site.
- IC MUX/DEMUX DUAL 4X1 16SOIC
- DIODE ZENER ARRAY 9.1V SOT323
- DIODE ZENER 13V 310MW SOD323F
- TRANS NPN 60V 1A SOT223
- MOSFET N-CH 40V 240A LFPAK56
- TVS DIODE 2.8VWM 5VC DSN0603-2
- TRANS NPN 40V 200MA SOT323
- TVS DIODE
- NEXPERIA BZX84J-C12 - ZENER DIOD
- IC BUS SWITCH 12 X 1:1 56TSSOP
- MOSFET N-CH 100V 9.3A LFPAK33
- NOW NEXPERIA 74LV132PW - NAND GA
- Nexperia announced the latest additions to its rapidly expanding portfolio of Clip-bonded FlatPower
- Nexperia will be showcasing its offering for automotive and industrial applications at electronica 2
- Nexperia announced a broadening to its portfolio of power management products
- Nexperia extends its ASFETs for Hotswap and Soft Start portfolio
- Nexperia announced the expansion of its portfolio of Clip-bonded FlatPower (CFP) packaged diodes
- Nexperia announced the latest additions to the Nexperia TrEOS portfolio, the PESD4V0Y1BBSF and PESD4
- Nexperia introduced an AEC-Q101 qualified portfolio with six ESD protection devices (PESD2CANFD36XX-
- Nexperia announced the four pin X2SON4 package which is the smallest logic package
- Nexperia announced its lowest-ever RDS(on) NextPower S3 MOSFETs in Trench 11 technology
- Nexperia announced the market’s fastest common mode filter (choke)/ ESD protection combination
- Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the
- Nexperia has announced a new range of ESD protection devices aimed specifically at protecting the ev